| 发明名称 |
REDUCED SHORT CHANNEL EFFECT OF III-V FIELD EFFECT TRANSISTOR VIA OXIDIZING ALUMINUM-RICH UNDERLAYER |
| 摘要 |
In one embodiment, a method of forming a semiconductor device is provided that may include forming a semiconductor device including a gate structure on a channel portion of III-V semiconductor substrate. The III-V semiconductor substrate including a III-V base substrate layer, an aluminum containing III-V semiconductor layer that is present on the III-V base substrate layer, and a III-V channel layer. Oxidizing a portion of the aluminum containing III-V semiconductor layer on opposing sides of the gate structure. Forming a raised source region and a raised drain region over the portion of the aluminum containing III-V semiconductor layer that has been oxidized. Forming interconnects to the raised source region and the raised drain region. |
| 申请公布号 |
US2014332855(A1) |
申请公布日期 |
2014.11.13 |
| 申请号 |
US201313888657 |
申请日期 |
2013.05.07 |
| 申请人 |
Machines Corporation International Business |
发明人 |
Cheng Cheng-Wei;Han Shu-Jen;Kobayashi Masaharu;Lee Ko-Tao;Sadana Devendra K.;Shiu Kuen-Ting |
| 分类号 |
H01L29/20 |
主分类号 |
H01L29/20 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method of forming a semiconductor device comprising:
forming a gate structure on a channel portion of III-V semiconductor substrate, wherein the III-V semiconductor substrate includes a III-V base substrate layer, an aluminum containing III-V semiconductor layer that is present on the III-V base substrate layer, and a III-V channel layer that is present on the aluminum containing III-V semiconductor layer, wherein the gate structure is present on the III-V channel layer; oxidizing a portion of the aluminum containing III-V semiconductor layer on opposing sides of the gate structure; forming a raised source region and a raised drain region over the portion of the aluminum containing III-V semiconductor layer that has been oxidized; and forming interconnects to the raised source region and the raised drain region. |
| 地址 |
US |
