LIGHT EMITTING DEVICES HAVING LIGHT COUPLING LAYERS WITH RECESSED ELECTRODES

摘要

A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second layer. A light coupling structure is disposed adjacent to one of the first layer and the second layer. In some cases, the light coupling structure is disposed adjacent to the first layer. An orifice formed in the light coupling structure extends to the first layer. An electrode formed in the orifice is in electrical communication with the first layer.

主权项

1. A light emitting device comprising:
a semiconductor layer; a light coupling layer on the semiconductor layer; and an electrode on the semiconductor layer, wherein the light coupling layer comprises a first layer having a first refractive index and a second layer having a second refractive index, and wherein the light coupling layer comprises light coupling moieties.