| 发明名称 |
SEMICONDUCTOR DEVICE, LIGHT EMITTING DEVICE USING THE SAME, AND LIGHT EMITTING DEVICE PACKAGE INCLUDING THE SAME |
| 摘要 |
A semiconductor device includes a silicon substrate, an initial buffer layer disposed on the silicon substrate, a transition layer disposed on the initial buffer layer, and a device structure disposed on the transition layer. The transition layer includes at least one of AlxGa1-xN (where 0<x<1) layers provided on the initial buffer layer and an inserted buffer layer provided at least one of between the AlxGa1-xN layers, at a lower end portion of the transition layer, or at an upper end portion of the transition layer. |
| 申请公布号 |
US2014332821(A1) |
申请公布日期 |
2014.11.13 |
| 申请号 |
US201414267306 |
申请日期 |
2014.05.01 |
| 申请人 |
Jang Jung Hun |
发明人 |
Jang Jung Hun |
| 分类号 |
H01L33/00;H01L29/20;H01L33/12 |
主分类号 |
H01L33/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a silicon substrate; an initial buffer layer provided on the silicon substrate; a transition layer provided on the initial buffer layer; and a semiconductor device structure provided on the transition layer,
wherein the transition layer includes at least one of AlxGa1-xN (where 0<x<1) layers provided on the initial buffer layer, and an inserted buffer layer provided at least one of between the AlxGa1-xN layers, at a lower end portion of the transition layer, or at an upper end portion of the transition layer. |
| 地址 |
Seoul KR |
