| 发明名称 |
ETCHING METHOD AND ETCHING LIQUID USED THEREIN |
| 摘要 |
An etching method having the step of: applying an etching liquid to a substrate, the etching liquid containing: a fluorine ion, a nitrogen-containing compound having at least 2 of nitrogen-containing structural units, and water, the etching liquid having a pH of being adjusted to 5 or less; and etching a titanium compound in the substrate. |
| 申请公布号 |
US2014332713(A1) |
申请公布日期 |
2014.11.13 |
| 申请号 |
US201414337301 |
申请日期 |
2014.07.22 |
| 申请人 |
FUJIFILM Corporation |
发明人 |
MIZUTANI Atsushi;TOMEBA Hisamitsu;TAKAHASHI Kazutaka;INABA Tadashi |
| 分类号 |
C23F1/26;H05K3/06 |
主分类号 |
C23F1/26 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An etching method comprising the steps of:
applying an etching liquid to a substrate, the etching liquid comprising: a fluorine ion, a nitrogen-containing compound having two or more nitrogen-containing structural units, and water, the etching liquid having a pH of being adjusted to 5 or less; and etching a titanium compound in the substrate. |
| 地址 |
Tokyo JP |
