| 发明名称 |
METHOD FOR PRODUCING GA2O3 CRYSTAL FILM |
| 摘要 |
A Ga2O3 crystal film is epitaxially grown on a Ga2O3 crystal substrate using an MBE method, while controlling the n-type conductivity with high accuracy. Provided is a method for producing a Ga2O3 crystal film, wherein a conductive Ga2O3 crystal film is formed by epitaxial growth using an MBE method. This method for producing a Ga2O3 crystal film comprises a step wherein a Ga2O3 single crystal film containing Sn is grown by producing a Ga vapor and an Sn vapor and supplying the Ga vapor and the Sn vapor to the surface of a Ga2O3 crystal substrate as molecular beams The Sn vapor is produced by heating Sn oxide that is filled in a cell of an MBE apparatus. |
| 申请公布号 |
US2014331919(A1) |
申请公布日期 |
2014.11.13 |
| 申请号 |
US201214357180 |
申请日期 |
2012.11.27 |
| 申请人 |
TAMURA CORPORATION |
发明人 |
Sasaki Kohei |
| 分类号 |
C30B23/06 |
主分类号 |
C30B23/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for producing a Ga2O3 based crystal film using a MBE method to form a conductive Ga2O3 based crystal film by epitaxial growth, comprising generating Ga vapor and Sn vapor and supplying the Ga vapor and the Sn vapor as a molecular beam to a surface of a Ga2O3 based crystal substrate so as to grow a Ga2O3 based single crystal film comprising Sn,
wherein the Sn vapor is generated by heating a Sn oxide that is filled in a cell of an MBE apparatus. |
| 地址 |
Tokyo JP |
