| 摘要 |
<p>Provided is a method for etching pitchers by using continuous plasma. The first plasma process is provided and includes a step of providing a flow of first process gas into a process chamber; a step of maintaining the continuous plasma; and a step of stopping the flow of the first process gas into the process chamber. A transition process is provided and includes a step of providing a flow of transition gas into the process chamber; a step of maintaining the continuous plasma; and a step of stopping the flow of the transition gas into the process chamber. A second plasma process is provided and includes a step of providing a flow of second process gas into the process chamber; a step of maintaining the continuous plasma; and a step of stopping the second process gas into the process chamber.</p> |
