| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for polishing a silicon wafer capable of preventing a PID from occurring in the silicon wafer by a mirror surface polishing step and preventing surface quality of a silicon wafer after the mirror surface polishing step and of an epitaxial wafer in which an epitaxial layer is laminated in a post step from deteriorating, and to provide a method for manufacturing an epitaxial wafer.SOLUTION: A method for polishing a silicon wafer for subjecting the silicon wafer to a mirror surface polishing step roughly processes the silicon wafer in the mirror surface polishing step, removes a metal impurity adhering to a surface of the silicon wafer by performing oxidation processing which uses an ozone gas or ozone water and oxide film removal processing which uses hydrofluoric acid vapor or a hydrofluoric acid solution for the surface of the silicon wafer, and performs finish polishing. |
