NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

A nonvolatile semiconductor memory device includes: a memory cell array having a plurality of memory cells arranged in a matrix; a reference bit line; a reference source line; at least one reference cell including first and second transistors serially connected between these lines; a reference word line connected to the gate of the first transistor; and a reference driver circuit configured to control the gate voltage of the second transistor.

主权项

1. A nonvolatile semiconductor memory device comprising:
a memory cell array having a plurality of memory cells each including a nonvolatile semiconductor memory element arranged in a matrix; a plurality of word lines placed in one-to-one correspondence with rows of the memory cell array and each connected in common to a plurality of memory cells arranged in a corresponding one of the rows; a plurality of bit lines placed in one-to-one correspondence with columns of the memory cell array and each connected in common to a plurality of memory cells arranged in a corresponding one of the columns; a plurality of source lines; a reference bit line; a reference source line; at least one reference cell including first and second transistors serially connected between the reference bit line and the reference source line; a reference word line connected to a gate of the first transistor of the reference cell; and a reference driver circuit configured to control a gate voltage of the second transistor of the reference cell.