发明名称 INTERCONNECT STRUCTURES CONTAINING NITRIDED METALLIC RESIDUES
摘要 A metal cap is formed on an exposed upper surface of a conductive structure that is embedded within an interconnect dielectric material. During the formation of the metal cap, metallic residues simultaneously form on an exposed upper surface of the interconnect dielectric material. A thermal nitridization process or plasma nitridation process is then performed which partially or completely converts the metallic residues into nitrided metallic residues. During the nitridization process, a surface region of the interconnect dielectric material and a surface region of the metal cap also become nitrided.
申请公布号 US2014332960(A1) 申请公布日期 2014.11.13
申请号 US201314028068 申请日期 2013.09.16
申请人 International Business Machines Corporation 发明人 Yang Chih-Chao;Cohen Stephan A.
分类号 H01L23/00 主分类号 H01L23/00
代理机构 代理人
主权项 1. An interconnect structure comprising: at least one conductive structure embedded within an interconnect dielectric material, wherein said interconnect dielectric material includes a nitrided interconnect dielectric material surface region located at an exposed surface thereof; a metal cap stack comprising, from bottom to top, a metal cap portion and a nitrided nitrided metal cap surface region located on an upper surface of the at least one conductive structure; and nitrided metallic residues on a surface of said nitrided interconnect dielectric material surface region.
地址 Armonk NY US