SELF-ALIGNED BIPOLAR JUNCTION TRANSISTOR HAVING SELF-PLANARIZING ISOLATION RAISED BASE STRUCTURES

摘要

A collector region is formed between insulating shallow trench isolation regions within a substrate. A base material is epitaxially grown on the collector region and the shallow trench isolation regions. The base material forms a base region on the collector region and extrinsic base regions on the shallow trench isolation regions. Further, a sacrificial emitter structure is patterned on the base region and sidewall spacers are formed on the sacrificial emitter structure. Planar raised base structures are epitaxially grown on the base region and the extrinsic base regions, and the upper layer of the raised base structures is oxidized. The sacrificial emitter structure is removed to leave an open space between the sidewall spacers and an emitter is formed within the open space between the sidewall spacers. The upper layer of the raised base structures comprises a planar insulator electrically insulating the emitter from the raised base structures.

主权项

1. A method comprising:
forming a collector region between insulating shallow trench isolation regions within a substrate; epitaxially growing a base material on said collector region and said shallow trench isolation regions to form a base region on said collector region and to form extrinsic base regions on said shallow trench isolation regions; patterning a sacrificial emitter structure on said base region; forming sidewall spacers on said sacrificial emitter structure; epitaxially growing raised base structures on said base region and said extrinsic base regions; oxidizing an upper layer of said raised base structures, said upper layer of said raised base structures being opposite a location where said raised base structures contact said base region and said extrinsic base regions; removing said sacrificial emitter structure to leave an open space between said sidewall spacers; and forming an emitter within said open space between said sidewall spacers.