SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

A semiconductor device includes: a first active region defined by a recess contained in a device isolation film of a semiconductor substrate belonging to a first region and a second region, in a peripheral region including the first region, the second region, and a third region; a second active region defined by the device isolation film contained in the semiconductor substrate of the third region; a buried metal layer buried in the recess; a first conductive layer formed over the semiconductor substrate of the first region; and a second conductive layer formed over the semiconductor substrate of the second region, wherein the first conductive layer or the second conductive layer is formed over the semiconductor substrate of the third region. A three-dimensional dual gate is formed in a peripheral region, such that performance or throughput of transistors is maximized even in the peripheral region.

主权项

1. A semiconductor device comprising:
a peripheral region in a semiconductor substrate, the peripheral region including a first region, a second region, and a third region; first active regions formed in a semiconductor substrate in the first region and the second region, the first active regions defined by recesses provided in device isolation films of the first region and the second region; a second active region defined by the device isolation film provided in the third region; a buried metal layer buried in one or more of the recesses; a first conductive layer formed over the first active region and the buried metal layer in the first region; and a second conductive layer formed over the first active region and the buried metal layer in the second region, wherein one of the first conductive layer and the second conductive layer is further formed over the second active region in the third region.