A PREPARATION METHOD OF NICKEL SULFIDE FILM

摘要

The present invention relates to a method for manufacturing a nickel sulfide thin film using atomic layer deposition comprising: step (a) of inserting a substrate into a deposition chamber; step (b) of absorbing a nickel precursor represented by the below chemical formula 1 by the atomic layer deposition on the substrate; step (c) of removing the rest of a byproduct except for the absorbed nickel precursor; step (d) of forming a nickel sulfide thin film on the substrate by an exchange reaction with the nickel precursor absorbed on the substrate by inserting sulfur into the deposition chamber; and step (e) of removing the rest of a byproduct except for the nickel sulfide thin film. [Chemical formula 1] When the nickel sulfide thin film is manufactured by the method for manufacturing the nickel sulfide thin film using the atomic layer deposition, a uniform metal layer is formed while the thickness of the metal layer is easily controlled, and the temperature of forming the metal layer on the substrate is relatively lowered.