| 摘要 |
In a manufacturing method of a solid-state image pickup device according to an embodiment, a transfer gate electrode is formed in a predetermined position on an upper surface of a first conductive semiconductor area, through a gate insulating film. A second conductive charge storage area is formed in an area adjacent to the transfer gate electrode in the first conductive semiconductor area. A sidewall is formed on a side surface of the transfer gate electrode. An insulating film is formed to extend from a circumference surface of the sidewall on a side of the charge storage area to a position partially covering the upper part of the charge storage area. A first conductive charge storage layer is formed in the charge storage area by implanting first conductive impurities from above, into the charge storage area which is partially covered with the insulating film. |
