发明名称 THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY APPARATUS
摘要 A thin film transistor (TFT) substrate comprises a substrate, a plurality of pixel electrodes, a gate layer, an active layer, a first source layer and a second source layer, and a drain layer. The pixel electrodes are disposed on the substrate. The gate layer is disposed on the substrate. The active layer is disposed corresponding to the gate layer. The first source layer and the second source layer contact the active layer respectively. The drain layer contacts the active layer and is electrically coupled to one of the pixel electrodes. The gate layer, the active layer, the first source layer and the drain layer constitute a first transistor. The gate layer, the active layer, the second source layer and the drain layer constitute a second transistor. When the first and second transistors are disabled, the first and second source layers are electrically isolated from each other.
申请公布号 US2014332826(A1) 申请公布日期 2014.11.13
申请号 US201314140427 申请日期 2013.12.24
申请人 InnoLux Corporation 发明人 WANG Chung-Yi;HSIEH Yao-Lien
分类号 H01L27/12 主分类号 H01L27/12
代理机构 代理人
主权项 1. A thin film transistor (TFT) substrate, comprising: a substrate; a plurality of pixel electrodes disposed on the substrate; a gate layer disposed on the substrate; an active layer disposed corresponding to the gate layer; a first source layer and a second source layer contacting the active layer respectively; and a drain layer contacting the active layer and electrically coupled to one of the pixel electrodes, wherein the gate layer, the active layer, the first source layer and the drain layer constitute a first transistor, the gate layer, the active layer, the second source layer and the drain layer constitute a second transistor, and when the first and second transistors are disabled, the first and second source layers are electrically isolated from each other.
地址 Jhu-Nan TW