Semiconductor Device and Manufacturing Method Thereof

摘要

To provide a semiconductor device having a structure with which the device can be easily manufactured even if the size is decreased and which can suppress a decrease in electrical characteristics caused by the decrease in the size, and a manufacturing method thereof. A source electrode layer and a drain electrode layer are formed on an upper surface of an oxide semiconductor layer. A side surface of the oxide semiconductor layer and a side surface of the source electrode layer are provided on the same surface and are electrically connected to a first wiring. Further, a side surface of the oxide semiconductor layer and a side surface of the drain electrode layer are provided on the same surface and are electrically connected to a second wiring.

主权项

1. A semiconductor device comprising:
a first oxide semiconductor layer; a source electrode layer over the first oxide semiconductor layer; a drain electrode layer over the first oxide semiconductor layer; and a second oxide semiconductor layer over the first oxide semiconductor layer, wherein the source electrode layer is in direct contact with a first part of a top surface of the first oxide semiconductor layer, wherein the source electrode layer is not in direct contact with any side surface of the first oxide semiconductor layer, wherein the drain electrode layer is in direct contact with a second part of the top surface of the first oxide semiconductor layer, wherein the drain electrode layer is not in direct contact with any side surface of the first oxide semiconductor layer, and wherein the second oxide semiconductor layer is in direct contact with a part of a top surface of the source electrode layer and a part of a top surface of the drain electrode layer.