METHOD OF FORMING A GERMANIUM THIN FILM

摘要

A method of forming a germanium thin film on an underlying film includes forming a germanium seed layer by absorbing a germanium on a surface of the underlying film using an aminogermane-based gas, and forming a germanium thin film on the germanium seed layer using a germane-based gas.

主权项

1. A germanium thin film formation apparatus which forms a germanium thin film on an underlying film, the germanium thin film formation apparatus comprising:
a process chamber which houses an object to be processed having the underlying film on which the germanium thin film is to be formed; a process gas supplying mechanism which supplies gas used for a process into the process chamber; a heating device which heats the object to be processed housed in the process chamber; an exhauster which evacuates the interior of the process chamber; and a controller configured to control the process gas supplying mechanism, the heating device, and the exhauster, wherein the controller controls the process gas supplying mechanism to: supply a aminogermane-based gas to the process chamber to form a germanium seed layer on an underlying film by absorbing a germanium on the surface of the underlying film; and supply a germane-based gas to the process chamber to form a germanium thin film on the germanium seed layer; and wherein the controller controls the heating device to set a process temperature inside the process chamber to a range of 200 to 500 degrees C.