发明名称 |
METHOD FOR FORMING A RESIST UNDER LAYER FILM AND PATTERNING PROCESS |
摘要 |
The present invention provides a method for forming a resist under layer film used in a lithography process, comprising: a process for applying a composition for forming a resist under layer film containing an organic compound having an aromatic unit on a substrate; and a process for heat-treating the resist under layer film applied in an atmosphere whose oxygen concentration is 10% or more at 150° C. to 600° C. for 10 to 600 seconds after heat-treating the same in an atmosphere whose oxygen concentration is less than 10% at 50 to 350° C. There can be provided a method for forming a resist under layer film having excellent filling/flattening properties so that unevenness on a substrate can be flattened even in complex processes such as multi-layer resist method and double patterning. |
申请公布号 |
US2014335692(A1) |
申请公布日期 |
2014.11.13 |
申请号 |
US201414253497 |
申请日期 |
2014.04.15 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
NONAKA Shiori;TACHIBANA Seiichiro;KORI Daisuke;FUJII Toshihiko;OGIHARA Tsutomu |
分类号 |
H01L21/3213;G03F7/11;G03F7/16 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming a resist under layer film used in a lithography process, comprising: a process for applying a composition for forming a resist under layer film containing an organic compound having an aromatic unit on a substrate; and a process for heat-treating the resist under layer film applied in an atmosphere whose oxygen concentration is 10% or more at 150° C. to 600° C. for 10 to 600 seconds after heat-treating the same in an atmosphere whose oxygen concentration is less than 10% at 50 to 350° C. |
地址 |
Tokyo JP |