| 发明名称 |
METHOD OF MAKING A CONDUCTIVE PILLAR BUMP WITH NON-METAL SIDEWALL PROTECTION STRUCTURE |
| 摘要 |
A method of making a semiconductor device includes forming an under bump metallurgy (UBM) layer over a substrate, the UBM layer comprising sidewalls and a surface region. The method further includes forming a conductive pillar over the UBM layer, the conductive pillar includes sidewalls, wherein the conductive pillar exposes the surface region of the UBM layer. The method further includes forming a non-metal protective structure over the sidewalls of the conductive pillar, wherein the non-metal protective structure contacts the surface region of the UBM layer, and the non-metal protective structure exposes the sidewalls of the UBM layer. |
| 申请公布号 |
US2014335687(A1) |
申请公布日期 |
2014.11.13 |
| 申请号 |
US201414444759 |
申请日期 |
2014.07.28 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WU Yi-Wen;LIN Cheng-Chung;HWANG Chien Ling;LIU Chung-Shi |
| 分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of making a semiconductor device, the method comprising:
forming an under bump metallurgy (UBM) layer over a substrate, the UBM layer comprising sidewalls and a surface region; forming a conductive pillar over the UBM layer, the conductive pillar comprising sidewalls, wherein the conductive pillar exposes the surface region of the UBM layer; and forming a non-metal protective structure over the sidewalls of the conductive pillar, wherein the non-metal protective structure contacts the surface region of the UBM layer, and the non-metal protective structure exposes the sidewalls of the UBM layer. |
| 地址 |
Hsinchu TW |
