| 发明名称 |
METHODS FOR ETCHING A SUBSTRATE |
| 摘要 |
In some embodiments, a method for etching features into a substrate may include exposing a substrate having a photoresist layer disposed atop the substrate to a first process gas to form a polymer containing layer atop sidewalls and a bottom of a feature formed in the photoresist layer, wherein the first process gas is selectively provided to a first area of the substrate via a first set of gas nozzles disposed within a process chamber and; exposing the substrate to a second process gas having substantially no oxygen to etch the feature into the substrate, wherein the second process gas is selectively provided to a second area of the substrate via a second set of gas nozzles disposed in the process chamber. |
| 申请公布号 |
US2014335679(A1) |
申请公布日期 |
2014.11.13 |
| 申请号 |
US201313938186 |
申请日期 |
2013.07.09 |
| 申请人 |
Applied Materials, Inc. |
发明人 |
LIU TONG;REYLAND DAVID;MISHRA ROHIT;SIRAJUDDIN KHALID MOHIUDDIN;YALAMANCHILI MADHAVA RAO;KUMAR AJAY |
| 分类号 |
H01L21/3065;H01L21/308 |
主分类号 |
H01L21/3065 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for etching features into a substrate, comprising:
exposing a substrate having a photoresist layer disposed atop the substrate to a first process gas to form a polymer containing layer atop sidewalls and a bottom of a feature formed in the photoresist layer, wherein the first process gas is selectively provided to a first area of the substrate via a first set of gas nozzles disposed within a process chamber; and exposing the substrate to a second process gas having substantially no oxygen to etch the feature into the substrate, wherein the second process gas is selectively provided to a second area of the substrate via a second set of gas nozzles disposed in the process chamber. |
| 地址 |
Santa Clara CA US |
