| 发明名称 |
METHODS OF MANUFACTURING FINFET SEMICONDUCTOR DEVICES USING SACRIFICIAL GATE PATTERNS AND SELECTIVE OXIDIZATION OF A FIN |
| 摘要 |
A method of manufacturing a semiconductor device includes patterning a substrate to form an active fin, forming a sacrificial gate pattern crossing over the active fin on the substrate, forming an interlayer insulating layer on the sacrificial gate pattern, removing the sacrificial gate pattern to form a gap region exposing the active fin in the interlayer insulating layer, and oxidizing a portion of the active fin exposed by the gap region to form an insulation pattern between the active fin and the substrate. |
| 申请公布号 |
US2014335673(A1) |
申请公布日期 |
2014.11.13 |
| 申请号 |
US201414262937 |
申请日期 |
2014.04.28 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
KIM SUNGMIN;Suk Sung-Dae;Park Jaehoo;Cha Dongho;Ha Daewon |
| 分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
patterning a substrate to form an active fin; forming a sacrificial gate pattern crossing over the active fin on the substrate; forming an interlayer insulating layer on the sacrificial gate pattern; removing the sacrificial gate pattern to form a gap region exposing the active fin in the interlayer insulating layer; and oxidizing a portion of the active fin exposed by the gap region to form an insulation pattern between the active fin and the substrate. |
| 地址 |
Suwon-si KR |
