DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE DISPLAY DEVICE

摘要

To provide a display device including a transistor that includes an oxide semiconductor and has favorable characteristics, a pixel electrode electrically connected to the transistor, and a capacitor electrically connected to the pixel electrode. To provide a display device that can be manufactured at low cost. The display device includes a display element including a pixel electrode, a transistor that performs switching of the display element and includes a first oxide semiconductor layer serving as a channel formation region, a capacitor that is electrically connected to the display element and includes a dielectric layer between a pair of electrodes. The pixel electrode is a second oxide semiconductor layer formed on the same surface as that on which the first oxide semiconductor layer is formed, and also serves as one electrode of the capacitor.

主权项

1. A display device comprising:
an insulating layer over a first substrate; a transistor comprising a gate electrode over the first substrate, a gate insulating layer over the gate electrode, an oxide semiconductor layer over the gate insulating layer, and a source electrode and a drain electrode over and in contact with the oxide semiconductor layer; a pixel electrode comprising an oxide over the insulating layer; a capacitor comprising a first electrode, a second electrode over the first electrode, and a dielectric layer between the first electrode and the second electrode; an oxide insulating layer over and in contact with the oxide semiconductor layer, and the source electrode and the drain electrode, the oxide insulating layer having an opening which overlaps with the pixel electrode and the first electrode; and a nitride insulating layer covering the oxide insulating layer, the nitride insulating layer being in contact with part of the pixel electrode, wherein the oxide semiconductor layer includes a channel formation region, wherein one of the source electrode and the drain electrode is over and in contact with the pixel electrode, wherein the gate electrode and the first electrode are on the same surface and made of the same material, wherein a first portion of the insulating layer serves as the gate insulating layer and a second portion of the insulating layer serves as the dielectric layer of the capacitor, wherein a portion of the pixel electrode serves as the second electrode of the capacitor, and wherein the oxide semiconductor layer and the pixel electrode contain indium, zinc, and a metal element.