| 摘要 |
A semiconductor device having a module structure in which a semiconductor chip (1) and a circuit pattern (4) are electrically connected by a wire (7), wherein a front-surface metal film is formed on the surface of a front-surface electrode of the semiconductor chip (1), the wire (7) being bonded to the front-surface metal film by wire bonding. The semiconductor chip (1) has a front-surface electrode on the front surface of a Si substrate or a SiC substrate, and a rear-surface electrode on the rear surface. The front-surface metal film is, e.g., a 3-7-µm-thick Ni film or a Ni alloy. The wire (7) is an Al wire in which the recrystallization temperature is increased and strength is heightened by controlling the crystal grain size before wire bonding to within a range of, for example, 1-20 µm. A highly reliable semiconductor device can thereby be provided that achieves large-current conduction and high-temperature operation. |
