ELECTROSTATIC PROTECTION ELEMENT AND LIGHT-EMITTING MODULE

摘要

This electrostatic protection element (10) is provided with a base (20) consisting of a high-resistivity semiconductor material. On a first primary surface of the base (20), external connection lands (22, 23) are formed separated by an interval in the first direction. On the first primary surface of the base (20), a diode (30) is formed by a semiconductor process. The diode (30) is formed between the formation regions of the external connection lands (22, 23) along the first direction. A high-concentration region (40) has the same polarity as the base (20) and contains more impurities than the base (20). The high-concentration region (40) has an annular shape when viewing the base (20) from above, and is formed in a shape surrounding the diode (30).