| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves high electron mobility and excellent uniformity and excellent reproducibility of threshold voltage while reducing gate leakage current and which can be applied to an enhancement type.SOLUTION: A semiconductor device in which a lower barrier layer 42 composed of lattice-relaxed AlGaN(0≤x≤1), a channel layer 43 composed of InGaN(0≤y≤1) having compressive strain and a contact layer 44 composed of AlGaN(0≤z≤1) are sequentially laminated, and a two-dimensional electron gas is generated near a boundary surface of the InGaN channel layer 43 with the AlGaN contact layer 44 comprises: a gate electrode 4G formed via an insulation film 45 so as to be embedded in a recess formed by removing a part of the AlGaN contact layer 44 by etching until the InGaN channel layer 43 is exposed; and an ohmic electrode formed on the AlGaN contact layer 44.</p> |
