发明名称 ELECTROSTATIC DISCHARGE DIODE
摘要 A method includes thinning a back-side of a substrate to expose a portion of a first via that is formed in the substrate. The method also includes forming a first diode at the back-side of the substrate. The first diode is coupled to the first via.
申请公布号 WO2014182449(A1) 申请公布日期 2014.11.13
申请号 WO2014US35076 申请日期 2014.04.23
申请人 QUALCOMM INCORPORATED 发明人 RAMACHANDRAN, VIDHYA;HENDERSON, BRIAN M.;GU, SHIQUN;TAN, CHIEW-GUAN;KIM, JUNG PILL;KIM, TAEHYUN
分类号 H01L27/06;H01L23/48;H01L23/60;H01L25/065;H01L27/02 主分类号 H01L27/06
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