METHOD FOR FORMING FINE PATTERN

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a fine pattern by which a resist pattern and an inorganic pattern with small LWR and good features are formed and a good pattern can be formed on a substrate to be processed.SOLUTION: The method for forming a fine pattern of the present invention includes steps of: (1) forming a resist film by applying a photoresist composition on the substrate to be processed; (2) exposing the resist film; (3) forming a negative resist pattern by developing the exposed resist film with a developing solution containing an organic solvent; (4) forming an inorganic layer to cover the resist pattern surface; (5) removing the inorganic layer except for a portion formed on a side wall of the resist pattern by etching back the inorganic layer; and (6) forming an inorganic pattern by removing the resist pattern.