ELECTRODE PLATE FOR PLASMA PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To easily and surely form a vent hole in a bent state.SOLUTION: A method for manufacturing a silicon electrode plate, in which a plurality of vent holes 11 connecting the end of a first hole 11a extending halfway in a thickness direction from one surface and the end of a second hole 11b extending halfway in a thickness direction from the other surface along an axis center c2 parallel to an axis center c1 of the first hole 11a via a communicating portion 21 are formed, comprises: a prepared hole forming step to form a first prepared hole for forming the first hole 11a and a second prepared hole for forming the second hole 11b respectively; a mask forming step to form etching masks so as to cover the inside surfaces of the first prepared hole and the second prepared hole; a mask drilling step to expose silicon by making holes at parts of the etching masks on the end surfaces of the first prepared hole and second prepared hole; and an etching step to form the communicating portion 21 by etching through a hole of the etching mask by pouring an etchant into the first prepared hole and the second prepared hole.