| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide single crystal, capable of reducing defect density of the silicon carbide single crystal.SOLUTION: A method for manufacturing a silicon carbide single crystal includes: preparing a first silicon carbide seed crystal 1 having a first principal surface 1a and a second principal surface 1b, a raw material arrangement part 5a, a seed crystal holding part 4 and a growth blocking part 5b; and growing a first silicon carbide single crystal on the first principal surface 1a including a small tilt angle grain boundary formed so as to surround a part of the outer end of the first principal surface 1a from the inside. The step of growing the first silicon carbide single crystal includes the step of decentering the first silicon carbide seed crystal 1 to the seed crystal holding part 4 so that the small tilt angle grain boundary is overlapped with the growth blocking part 5b in a plane view and the center of the first principal surface 1a is not overlapped with the growth blocking part 5b in the plane view and growing the first silicon carbide single crystal on the first principal surface 1a of the first silicon carbide seed crystal 1 while holding the second principal surface 1b on the seed crystal holding part 4.</p> |
