| 发明名称 |
Semiconductor Device |
| 摘要 |
A switching component includes a control element and an integrated circuit. The integrated circuit includes a first transistor element and a second transistor element electrically connected in parallel to the first transistor element. The first transistor element includes first transistors, gate electrodes of which are disposed in first trenches in a first main surface of a semiconductor substrate. The second transistor element includes second transistors, gate electrodes of which are disposed in second trenches in the first main surface, and a second gate conductive line in contact with the gate electrodes in the second trenches. The control element is configured to control a potential applied to the second gate conductive line. |
| 申请公布号 |
US2014332877(A1) |
申请公布日期 |
2014.11.13 |
| 申请号 |
US201414249505 |
申请日期 |
2014.04.10 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Noebauer Gerhard;Kadow Christoph;Dibra Donald;Illing Robert |
| 分类号 |
H01L27/02 |
主分类号 |
H01L27/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A switching component comprising a control element and an integrated circuit, the integrated circuit comprising:
a first transistor element comprising first transistors, gate electrodes of the first transistors being disposed in first trenches in a first main surface of a semiconductor substrate; and a second transistor element electrically connected in parallel to the first transistor element, the second transistor element comprising:
second transistors, gate electrodes of the second transistors being disposed in second trenches in the first main surface; anda second gate conductive line in contact with the gate electrodes in the second trenches, wherein the control element is configured to control a potential applied to the second gate conductive line. |
| 地址 |
Villach AT |
