SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A method for manufacturing semiconductor devices includes following steps. A substrate having a pixel region and a periphery region defined thereon is provided, and at least a transistor is formed in the pixel region. A blocking layer is formed on the substrate, and the blocking layer includes a first opening exposing a portion of the substrate in the pixel region and a second opening exposing a portion of the transistor. A first conductive body is formed in the first opening and a second conductive body is formed in the second opening, respectively. The first conductive body protrudes from the substrate and the second conductive body protrudes from the transistor. A portion of the blocking layer is removed. A first salicide layer is formed on the first conductive body and a second salicide layer is formed on the second conductive body, respectively.

主权项

1. A manufacturing method of a semiconductor device, comprising:
providing a substrate having a pixel region and a periphery region defined thereon, and at least a transistor being formed in the pixel region; forming a blocking layer on the substrate; forming a first opening and a second opening in the blocking layer, the first opening exposing a portion of the substrate in the pixel region and the second opening exposing a portion of the transistor; forming a first conductive body in the first opening and a second conductive body in the second opening respectively, the first conductive body protruding from the substrate and the second conductive body protruding from the transistor; removing a portion of the blocking layer; and forming a first salicide layer on the first conductive body and a second salicide layer on the second conductive body, respectively.