| 摘要 |
<p>A semiconductor structure includes a device, a conductive pad on the device, and an Ag1-xYx alloy bump. The Y of the Ag1-xYx alloy bump includes a complete solid having a random wt% of Ag. The X of the Ag1-xYx alloy is approximately in a range of 0.005 to 0.25. A difference between an average value and a standard deviation of one of the particle size distribution of the Ag1-xYx alloy is approximately in a range of 0.2μm to 0.4μm. The average particle size of the Ag1-xYx alloy in a vertical cross section is approximately in a range of 0.5μm to 1.5μm.</p> |
