发明名称 |
HIGH ASPECT RATIO OPENINGS |
摘要 |
A capacitor forming method includes forming an electrically conductive support material over a substrate, with the support material containing at least 25 at % carbon. The method includes forming an opening through at least the support material where the opening has an aspect ratio of at least 20:1 within a thickness of the support material. After forming the opening, the method includes processing the support material to effect a reduction in conductivity, and forming a capacitor structure in the opening. |
申请公布号 |
US2014334064(A1) |
申请公布日期 |
2014.11.13 |
申请号 |
US201414279592 |
申请日期 |
2014.05.16 |
申请人 |
Micron Technology, Inc. |
发明人 |
Kiehlbauch Mark W. |
分类号 |
H01G4/08 |
主分类号 |
H01G4/08 |
代理机构 |
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代理人 |
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主权项 |
1. A capacitor forming method comprising:
forming an electrically conductive material over a substrate, the electrically conductive material containing at least 20 at % carbon; forming an opening in the electrically conductive material; and after forming the opening, processing the electrically conductive material to effect a reduction in conductivity. |
地址 |
Boise ID US |