| 发明名称 |
MEMORY ELEMENT AND MEMORY DEVICE |
| 摘要 |
There is disclosed an information storage element including a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection. A magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer. |
| 申请公布号 |
US2014332916(A1) |
申请公布日期 |
2014.11.13 |
| 申请号 |
US201414446685 |
申请日期 |
2014.07.30 |
| 申请人 |
Sony Corporation |
发明人 |
Yamane Kazutaka;Hosomi Masanori;Ohmori Hiroyuki;Bessho Kazuhiro;Higo Yutaka;Uchida Hiroyuki;Asayama Tetsuya |
| 分类号 |
H01L43/02;H01L43/10 |
主分类号 |
H01L43/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An information storage element comprising:
a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer, wherein the first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection, and wherein a magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer. |
| 地址 |
Tokyo JP |
