发明名称 Flux Residue Cleaning System and Method
摘要 A flux residue cleaning system includes first and second immersion chambers, first and second spray chambers, and a drying chamber. The first immersion chamber softens an outer region of a flux residue formed around microbumps interposed between a wafer and a die when the wafer is immersed in a first chemical. The first spray chamber removes the outer region of the flux residue when the wafer is impinged upon by a first chemical spray in order to expose an inner region of the flux residue. The second immersion chamber softens the inner region of the flux residue when the wafer is immersed in a second chemical. The second spray chamber removes the inner region of the flux residue when the wafer is impinged upon by a second chemical spray in order to clean the wafer to a predetermined standard. The drying chamber dries the wafer.
申请公布号 US2014332033(A1) 申请公布日期 2014.11.13
申请号 US201414444488 申请日期 2014.07.28
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chen I-Ting;Lin Jing-Cheng;Lu Szu Wei;Shih Ying-Ching
分类号 H01L21/02 主分类号 H01L21/02
代理机构 代理人
主权项 1. A method comprising: softening an outer region of a flux residue formed around conductive connectors interposed between a wafer and a die; after the softening the outer region of the flux residue, removing the outer region of the flux residue to expose an inner region of the flux residue; after the removing the outer region of the flux residue, softening the inner region of the flux residue formed around conductive connectors interposed between the wafer and the die; and after the softening the inner region of the flux residue, removing the inner region of the flux residue.
地址 Hsin-Chu TW