发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
摘要 Provided is a semiconductor device that suppresses the occurrence of defects due to photocorrosion. A method for manufacturing the semiconductor device includes the steps of: forming an insulating layer with a concave portion over a substrate; forming a conductive film over the insulating film and the inside of the concave portion; polishing and removing the conductive film positioned over the insulating layer; and cleaning the insulating layer in a light-shielded state. Between the step of polishing and the step of cleaning, or after the step of cleaning, the substrate SUB is moved by detecting the presence or absence of the substrate SUB in the light-shielded state using an infrared sensor.
申请公布号 US2014335632(A1) 申请公布日期 2014.11.13
申请号 US201414264166 申请日期 2014.04.29
申请人 Renesas Electronics Corporation 发明人 Nosaka Takayuki
分类号 H01L21/66;B65G35/00;H01L21/768 主分类号 H01L21/66
代理机构 代理人
主权项 1. A method for manufacturing a semiconductor device, comprising the steps of: forming an insulating layer with a concave portion over a substrate; forming a conductive film over the insulating film and an inside of the concave portion; polishing and removing the conductive film positioned over the insulating layer; cleaning the insulating layer in a light-shielded state; and moving the substrate by detecting presence or absence of the substrate in the light-shielded state using a sensor between the step of polishing and the step of cleaning, or after the step of cleaning.
地址 Kawasaki-shi JP