SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A bottom-gate transistor with a short channel length and a method for manufacturing the transistor are provided. A bottom-gate transistor with a short channel length in which portions of a source electrode and a drain electrode which are proximate to a channel formation region are thinner than other portions thereof was devised. In addition, the portions of the source electrode and the drain electrode which are proximate to the channel formation region are formed in a later step than the other portions thereof, whereby a bottom-gate transistor with a short channel length can be manufactured.

主权项

1. A semiconductor device comprising:
a gate electrode layer; a gate insulating layer on one surface of the gate electrode layer; a semiconductor layer on one surface of the gate insulating layer; a first conductive layer over the semiconductor layer; a second conductive layer over the first conductive layer; a protective layer over the second conductive layer; and a hard mask layer over the protective layer, wherein the hard mask layer comprises an opening which overlaps with a channel formation region of the semiconductor layer.