发明名称 CARRIER SUBSTRATE AND MANUFACTURING METHOD THEREOF
摘要 A carrier substrate includes a dielectric layer, a first circuit layer, an insulation layer, conductive blocks, and a first conductive structure. The dielectric layer has a first surface, a second surface, and blind vias. The first circuit layer is embedded in the first surface and the blind vias extend from the second surface to the first circuit layer. The insulation layer is disposed on the first surface and has a third surface, a fourth surface, and first openings. The first openings expose the first circuit layer and an aperture of each first opening is increased gradually from the third surface to the fourth surface. The conductive blocks fill the first openings and connect with the first circuit layer. The first conductive structure includes conductive vias filling the blind vias and a second circuit layer disposed on a portion of the second surface.
申请公布号 US2014332253(A1) 申请公布日期 2014.11.13
申请号 US201313966295 申请日期 2013.08.14
申请人 Unimicron Technology Corp. 发明人 Lin Chun-Ting
分类号 H05K1/11;H05K3/46 主分类号 H05K1/11
代理机构 代理人
主权项 1. A carrier substrate, comprising: a dielectric layer having a first surface and a second surface opposite to each other and a plurality of blind vias; a first circuit layer embedded in the first surface of the dielectric layer and having an upper surface and a lower surface opposite to each other, the upper surface exposed from the first surface of the dielectric layer, wherein the blind vias extend from the second surface to the first circuit layer and expose a portion of the lower surface of the first circuit layer; an insulation layer having a third surface and a fourth surface opposite to each other and disposed on the first surface of the dielectric layer through the fourth surface and covers a portion of the upper surface of the first circuit layer, the insulation layer having a plurality of first openings extending from the third surface to the fourth surface, wherein the first openings expose another portion of the upper surface of the first circuit layer, an aperture of each first opening is increased gradually from the third surface to the fourth surface, and the apertures of the first openings on the fourth surface are greater than a width of the exposed first circuit layer; a plurality of conductive blocks respectively disposed in the first openings of the insulation layer and connected with another portion of the upper surface of the first circuit layer exposed by the first openings; and a first conductive structure disposed on the second surface of the dielectric layer and comprising a plurality of conductive vias filling the blind vias and a second circuit layer disposed on a portion of the second surface.
地址 Taoyuan TW