发明名称 APPARATUSES AND METHODS OF OPERATING FOR MEMORY ENDURANCE
摘要 Methods of operating an apparatus such as a computing system and/or memory device for memory endurance are provided. One example method can include receiving m digits of data having a first quantity of digits represented by a first data state that is more detrimental to memory cell wear than a second data state. The m digits of data are encoded into n digits of data having a second quantity of digits represented by the first data state. The value n is greater than the value m. The second quantity is less than or equal to the first quantity. The n digits of data are stored in an apparatus having memory cells.
申请公布号 US2014337564(A1) 申请公布日期 2014.11.13
申请号 US201414284825 申请日期 2014.05.22
申请人 Micron Technology, Inc. 发明人 Varanasi Chandra C.
分类号 G11C16/34;G11C16/10 主分类号 G11C16/34
代理机构 代理人
主权项
地址 Boise ID US