发明名称 ION TRAP
摘要 An ion trap comprising: a first array of magnetic elements arranged to generate a first magnetic field with a degree of homogeneity; and an array of electrodes arranged to generate an electrostatic field including a turning point in electrical potential at a location where the magnetic field has a substantially maximum degree of homogeneity; wherein the array of electrodes is planar and parallel to the direction of the magnetic field at the location; and wherein a primary first magnetic element is arranged to generate a first component of the first magnetic field and other first magnetic elements are arranged to generate compensating components of the first magnetic field that reduce the gradient, the curvature and higher order derivatives of the first component of the first magnetic field at the location where the first magnetic field has the substantially maximum degree of homogeneity.
申请公布号 US2014332680(A1) 申请公布日期 2014.11.13
申请号 US201214346007 申请日期 2012.09.20
申请人 THE UNIVERSITY OF SUSSEX 发明人 Verdu Galiana Jose Luis
分类号 H01J49/20;H01J49/00 主分类号 H01J49/20
代理机构 代理人
主权项 1. An ion trap comprising: a first array of magnetic elements arranged to generate a first magnetic field with a degree of homogeneity; and an array of electrodes arranged to generate an electrostatic field including a turning point in electrical potential at a location where the magnetic field has a substantially maximum degree of homogeneity; wherein the array of electrodes is planar and parallel to the direction of the magnetic field at the location; and wherein a primary first magnetic element is arranged to generate a first component of the first magnetic field and other first magnetic elements are arranged to generate compensating components of the first magnetic field that reduce the gradient, the curvature and higher order derivatives of the first component of the first magnetic field at the location where the first magnetic field has the substantially maximum degree of homogeneity.
地址 Brigh East Sussex GB