SEED CRYSTAL SUBSTRATE FOR GROWING SILICON CARBIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide seed crystal substrate capable of growing a silicon carbide single crystal ingot having high quality by a sublimation recrystallization method.SOLUTION: A lid inner surface 4a of a crucible 3 and a mounting surface 1a of a seed crystal substrate 1 mounted on the lid inner substrate are flattened so as to be an average roughness (Ra) of 5 μm or less. When the lid inner surface or a measuring surface having the same flatness as the lid inner surface is used as a reference plane and the mounting surface of the seed crystal substrate is left on the reference plane, a distance h between the reference plane and a point 11 where a perpendicular from the reference plane is contacted with the outer peripheral side 1b of the seed crystal substrate is 0.1 mm or less. The seed crystal substrate for growing a silicon carbide single crystal can prevent thermal decomposition generated from a gap 10 between the lid inner surface of the crucible and the mounting surface of the seed crystal substrate and manufacture a silicon carbide single crystal ingot having high quality.