| 摘要 |
PROBLEM TO BE SOLVED: To provide a configuration capable of improving gettering properties while inhibiting the occurrence of leakage current in a semiconductor device capable of achieving a high withstand voltage.SOLUTION: A semiconductor device 1 comprises: an SOI substrate 5 having a silicon on insulator structure composed of a support substrate 3, a first conductivity type SOI layer 2 composed primarily of silicon and a buried oxide film 4 buried between the support substrate 3 and the SOI layer 2; and a semiconductor element 50 formed on a surface layer side of the SOI layer 2. The buried oxide film 4 is formed in a thickness of 4 μm and over. In addition, the SOI layer 2 is ion implanted with neutral elements which become electrically inactive to the SOI layer 2 in a dose amount of not less than 1.0×10atoms/cmand not more than 5.0×10atoms/cm. |
