| 摘要 |
PROBLEM TO BE SOLVED: To form a resist pattern improved in surface defects (the number of deposited foreign substances) and showing good features by a method for forming a negative resist pattern by using a resist composition which contains a resin that exhibits increase in the polarity by an action of an acid and which induces decrease in the solubility with a negative developing solution by irradiation of actinic rays or radiation.SOLUTION: A method for forming a resist pattern includes the steps of: (1) forming a photosensitive resist film by applying on a substrate a photosensitive resist composition which contains a resin that exhibits increase in the polarity by an action of an acid and which induces decrease in the solubility with a negative developing solution by irradiation with actinic rays or radiation; (2) exposing the photosensitive resist film; (3) developing the exposed photosensitive resist film by using a negative developing solution; and if necessary, (4) rinsing the resist film with an organic solvent immediately after the development with a negative developing solution. In the above method, the development or rinsing process is carried out by using a negative developing or rinsing solution containing 0.015 to 0.4 mass% of an aromatic compound with respect to the entire mass of the organic solvent and the negative developing or rinsing solution. The aromatic compound is preferably, for example, benzyl alcohol, 4-fluorobenzyl alcohol, benzyl acetate, furfural, thienyl alcohol, diphenyl ether, or methylimidazole. |
