发明名称 SEMICONDUCTOR MODULE ELECTRODE STRUCTURE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor module electrode structure and a manufacturing method of the same, which can inhibit the diffusion of copper to a polyimide varnish during a heat treatment on the polyimide varnish thereby to improve reliability of the semiconductor module.SOLUTION: A semiconductor module electrode structure comprises: a semiconductor element substrate 20; an electrode 3 which includes a metal layer 2 formed on the semiconductor element substrate 20 and formed by copper or a copper compound, or includes the metal layer 2 and a diffusion barrier layer 1; an antirust film 4 formed on a surface of the electrode 3; a film 5 which is formed between the antirust film 4 and the electrode 3 and formed by contact of the copper included in the electrode 3 with the antirust film 4; and a polyimide film 7 as an insulation film formed on the antirust film 4.
申请公布号 JP2014212225(A) 申请公布日期 2014.11.13
申请号 JP20130088005 申请日期 2013.04.19
申请人 MITSUBISHI ELECTRIC CORP 发明人 ENDO KAZUYO;YOKOYAMA YOSHINORI;FUJITA ATSUSHI;NISHIKAWA KAZUYASU
分类号 H01L21/3205;H01L21/768;H01L23/522;H01L23/532 主分类号 H01L21/3205
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