发明名称 |
SEMICONDUCTOR MODULE ELECTRODE STRUCTURE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor module electrode structure and a manufacturing method of the same, which can inhibit the diffusion of copper to a polyimide varnish during a heat treatment on the polyimide varnish thereby to improve reliability of the semiconductor module.SOLUTION: A semiconductor module electrode structure comprises: a semiconductor element substrate 20; an electrode 3 which includes a metal layer 2 formed on the semiconductor element substrate 20 and formed by copper or a copper compound, or includes the metal layer 2 and a diffusion barrier layer 1; an antirust film 4 formed on a surface of the electrode 3; a film 5 which is formed between the antirust film 4 and the electrode 3 and formed by contact of the copper included in the electrode 3 with the antirust film 4; and a polyimide film 7 as an insulation film formed on the antirust film 4. |
申请公布号 |
JP2014212225(A) |
申请公布日期 |
2014.11.13 |
申请号 |
JP20130088005 |
申请日期 |
2013.04.19 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
ENDO KAZUYO;YOKOYAMA YOSHINORI;FUJITA ATSUSHI;NISHIKAWA KAZUYASU |
分类号 |
H01L21/3205;H01L21/768;H01L23/522;H01L23/532 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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