发明名称 |
PULSED DIELECTRIC ETCH PROCESS FOR IN-SITU METAL HARD MASK SHAPE CONTROL TO ENABLE VOID-FREE METALLIZATION |
摘要 |
An all-in-one trench-over-via etch wherein etching of a low-k material beneath a metal hard mask of titanium nitride containing material is carried out in alternating steps of (a) etching the low-k material while maintaining chuck temperature at about 45 to 80° C. and (b) metal hard mask rounding and Ti-based residues removal while maintaining chuck temperature at about 90 to 130° C. |
申请公布号 |
US2014335697(A1) |
申请公布日期 |
2014.11.13 |
申请号 |
US201313888901 |
申请日期 |
2013.05.07 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
Indrakanti Ananth;Nagabhirava Bhaskar;Jensen Alan;Choi Tom |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
1. A method of etching self-aligned vias and trenches in a multi-layer film stack supported by a temperature controlled electrostatic chuck in a plasma processing apparatus wherein the temperature controlled electrostatic chuck adjusts the temperature of the multi-layer film stack during etching of the self-aligned vias and trenches, the method comprising alternating steps of
(a) etching low-k material beneath a metal hard mask (MHM) of titanium nitride containing material while maintaining the chuck at about 45 to 80° C. and (b) MHM rounding and Ti-based residues removal while maintaining the chuck at about 90 to 130° C. and repeating (a) and (b) at least once; wherein the low-k material and the metal hard mask in the repeating step (a) are the same as the low-k material and the metal hard mask in the original step (a). |
地址 |
Fremont CA US |