发明名称 |
SUBSTRATES FOR SEMICONDUCTOR DEVICES |
摘要 |
A method of manufacturing a composite substrate for a semiconductor device, the method comprising: selecting a substrate wafer comprising: a first layer of single crystal material suitable for epitaxial growth of a compound semiconductor thereon and having a thickness of 100 μm or less;a second layer having a thickness of no less than 0.5 μm and formed of a material having a lower thermal expansion coefficient than the first layer of single crystal material and/or is formed of a material which has a higher fracture strength than that of the first layer of single crystal material; and a third layer forming a handling wafer on which the first and second layers are disposed, wherein the substrate wafer has an aspect ratio, defined by a ratio of thickness to width, of no less than 0.25/100; growing a first polycrystalline CVD diamond layer on the first layer of single crystal material using a chemical vapour deposition technique to form a composite comprising the substrate wafer bonded to the polycrystalline diamond layer via the first layer of single crystal material, wherein during growth of the first polycrystalline CVD diamond layer a temperature difference at a growth surface between an edge and a centre point thereof is maintained to be no more than 80° C.; and removing the second and third layers of the substrate wafer to form a composite substrate comprising the polycrystalline diamond layer directly bonded to the first layer of single crystal material. |
申请公布号 |
US2014332934(A1) |
申请公布日期 |
2014.11.13 |
申请号 |
US201214362839 |
申请日期 |
2012.12.12 |
申请人 |
Element Six Limited |
发明人 |
Mollart Timothy Peter;Jiang Quanzhong;Bowen Christopher Rhys;Allsopp Duncan William Edward;Edwards Michael John |
分类号 |
C30B25/18;H01L23/373;H01L21/02;H01L21/311;H01L29/06 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a composite substrate for a semiconductor device, the method comprising:
selecting a substrate wafer comprising: a first layer of single crystal material suitable for epitaxial growth of a compound semiconductor thereon and having a thickness of 100 μm or less; a second layer having a thickness of no less than 0.5 μm and formed of a material having a lower thermal expansion coefficient than the first layer of single crystal material and/or is formed of a material which has a higher fracture strength than that of the first layer of single crystal material; and a third layer forming a handling wafer on which the first and second layers are disposed, wherein the substrate wafer has an aspect ratio, defined by a ratio of thickness to width, of no less than 0.25/100; growing a first polycrystalline CVD diamond layer on the first layer of single crystal material using a chemical vapour deposition technique to form a composite comprising the substrate wafer bonded to the polycrystalline diamond layer via the first layer of single crystal material, wherein during growth of the first polycrystalline CVD diamond layer a temperature difference at a growth surface between an edge and a centre point thereof is maintained to be no more than 80° C.; and removing the second and third layers of the substrate wafer to form a composite substrate comprising the polycrystalline diamond layer directly bonded to the first layer of single crystal material. |
地址 |
London GB |