TERMINATION DESIGN FOR NANOTUBE MOSFET

摘要

A termination structure for a semiconductor power device includes a plurality of termination groups formed in a lightly doped epitaxial layer of a first conductivity type over a heavily doped semiconductor substrate of a second conductivity type. Each termination group includes a trench formed in the lightly doped epitaxial layer of the first conductivity type. All sidewalls of the trench are covered by a plurality of epitaxial layers of alternating conductivity types disposed on two opposite sides and substantially symmetrical with respect to a central gap-filler layer disposed between two innermost epitaxial layers of an innermost conductivity type as the first conductivity type.

主权项

1. A termination structure enclosing an active device area of a semiconductor power device disposed on a semiconductor die, comprising:
a plurality of termination groups formed in a lightly doped epitaxial layer of a first conductivity type over a heavily doped semiconductor substrate of a second conductivity type, wherein each termination group includes a trench formed in the lightly doped epitaxial layer of the first conductivity type, and wherein sidewalls of the trench are covered by a plurality of epitaxial layers of alternating conductivity types disposed on opposite sides and substantially symmetrical with respect to a central gap-filler layer disposed between two innermost epitaxial layers of an innermost conductivity type.