Semiconductor Device Having Dummy Gate and Gate

摘要

A fin-shaped active region is defined on a substrate. First and second gate electrodes crossing the fin-shaped active region are arranged. A dummy gate electrode is formed between the first and second gate electrodes. A first drain region is formed between the first gate electrode and the dummy gate electrode. A second drain region is formed between the dummy gate electrode and the second gate electrode. A source region facing the second drain region is formed. A first drain plug relatively close to the dummy gate electrode, relatively far from the second gate electrode, and connected to the second drain region is formed. The second gate electrode is arranged between the second drain region and the source region. Each of the first and second gate electrodes covers a side surface of the fin-shaped active region.

主权项

1. An electrostatic discharge (ESD) protection device, comprising:
a fin-shaped active region defined on a substrate; first and second gate electrodes crossing the fin-shaped active region and spaced apart from each other; a dummy gate electrode formed between the first and second gate electrodes, crossing the fin-shaped active region, and covering a side surface of the fin-shaped active region; a first drain region formed in the active region disposed between the first gate electrode and the dummy gate electrode; a second drain region formed in the active region disposed between the dummy gate electrode and the second gate electrode; a source region formed in the fin-shaped active region and spaced apart from the second drain region; and a first drain plug connected to the second drain region, wherein the second gate electrode is arranged between the second drain region and the source region, and each of the first and second gate electrodes covers the side surface of the fin-shaped active region, and a distance between the first drain plug and the second gate electrode is greater than that between the first drain plug and the dummy gate electrode.