| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes a transistor array, including first transistors and second transistors. Gate electrodes of the first transistors are disposed in first trenches in a first main surface of a semiconductor substrate, and gate electrodes of the second transistors are disposed in second trenches in the first main surface. The first and second trenches are disposed in parallel to each other. The semiconductor device further includes a first gate conductive line in contact with the gate electrodes in the first trenches, a second gate conductive line in contact with the gate electrodes in the second trenches, and a control element configured to control the potential applied to the second gate conductive line. |
| 申请公布号 |
US2014332881(A1) |
申请公布日期 |
2014.11.13 |
| 申请号 |
US201313888546 |
申请日期 |
2013.05.07 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Noebauer Gerhard;Kadow Christoph;Dibra Donald;Illing Robert |
| 分类号 |
H01L27/088;H01L29/78;H01L27/105 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a transistor array comprising first transistors and second transistors, gate electrodes of the first transistors being disposed in first trenches in a first main surface of a semiconductor substrate, gate electrodes of the second transistors being disposed in second trenches in the first main surface; a first gate conductive line in contact with the gate electrodes in the first trenches; a second gate conductive line in contact with the gate electrodes in the second trenches; and a control element configured to control the potential applied to the second gate conductive line. |
| 地址 |
Villach AT |
