| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a high aspect ratio and microfabrication of an uneven structure by improving a PR selection ratio in substrate plasma processing for forming, on a surface of a sapphire substrate, the uneven structure corresponding to a mask pattern by executing the plasma processing on the sapphire substrate on which the mask pattern is arranged. <P>SOLUTION: A plasma processing method of a sapphire substrate comprises executing plasma processing on a sapphire substrate, on which a mask pattern is formed by a resist film arranged on a surface, by using a mixed gas obtained by mixing a CH<SB POS="POST">2</SB>F<SB POS="POST">2</SB>gas with a BCl<SB POS="POST">3</SB>-based gas to form, on the surface of the sapphire substrate, an uneven structure corresponding to the mask pattern. <P>COPYRIGHT: (C)2013,JPO&INPIT |
