发明名称 ナノシリコン材料とその製造方法
摘要 <p>PROBLEM TO BE SOLVED: To provide a nano-silicon material that has large specific surface area and has a reduced content of SiO.SOLUTION: The nano-silicon material is manufactured by subjecting a layered polysilane produced by reacting an acid with calcium disilicide to heat treatment. The layered polysilane used has peaks at a Raman shift of 341±10 cm, 360±10 cm, 498±10 cm, 638±10 cmand 734±10 cmon a Raman spectrum.</p>
申请公布号 JP5621838(B2) 申请公布日期 2014.11.12
申请号 JP20120275622 申请日期 2012.12.18
申请人 发明人
分类号 H01M4/38;C01B33/02 主分类号 H01M4/38
代理机构 代理人
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